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TELEFUNKEN Semiconductors
TDA4481-D
Multistandard quasi parallel-sound processor for Mono-TV-Sets
Technology: Bipolar Features
D D D D D D
High signal sensitivity High signal to noise ratio Easy alignment of the multistandard filters Converter for different intercarrier frequencies AF output level matched to SIMAVELEC condition Few external components
D Alignment free AM demodulator for standard L D Standardized SCART interface D Standard-, SCART- and Mute-switch TTL compatible D AF attenuator D ESD protected
Case: 20-pin dual inline plastic
Figure 1 Block diagram Rev. A1: 23.02.1995 1 (10)
TDA4481-D
Pin Configuration
Pin 1-2 3 4 5 6 7 8 9 10 Function Picture-IF-carrier input SCART-switch AGC storage capacitor SCART-AF input Standard switch AF output (controlled) Volume control voltage SCART-AF output VC0 tank circuit Pin 11 12-13 14 15 16 17 18-19 20
TELEFUNKEN Semiconductors
Function Ground FM demod. circuit 5.5 MHz FM deemphasis capacitor Intercarrier output 5.5 MHz Supply voltage Intercarrier input 5.5 MHz and muting Sound-IF-carrier input not connected
Description
This circuit configuration permits high-quality processing of audio carriers for all standards, providing separate inputs for the video and audio carriers. The audio carrier signal (FM or AM) is passed to two multiplying mixer arrangements via a 3-stage variable wide-band amplifier with levelled output signals. One mixer demodulates AM and generates the gain control signal. The second mixer operates as an intercarrier demodulator and supplies the intermediate AF carrier. The video carrier signal required to form the intercarrier is decoupled in a prelimited and selected form from the demodulator tank of the intermediate video frequency circuit (TDA 4453 or TDA 4439) and led to the intercarrier mixer via a limiting amplifier. By virtue of the system, the Nyquist range of the IF input filter in the video channel affects the attainable AF signal-to-noise ratio. The audio FM IF carrier reaches a quadrature demodulator via an interconnected IF-filter and subsequent limiting amplifier. The resulting AF signal is led via a low-pass amplifier with increased level and the AF standard switch to the SCART switch. It is available at both AF outputs, regulated (pin 7) and unregulated (pin 9). Pin 14 is provided to connect a de-emphasis capacitor (10 nF for 50 ms). The de-emphasis is effective for both AF outputs during FM operation, but deactivated for AM operation. A frequency converter is inserted to mix the different possible sound frequency standards (4.5, 6.0, 6.5 MHz) into a uniform intermediate audio frequency, e.g. 5.5 MHz. The VCO frequency (pin 10) can be controlled from the unlevelled AF output at pin 9 or the de-emphasis connection at pin 14. The intercarrier and converter circuits as well as the FM demodulator are deactivated during AM modulation. FM muting is also possible if a switching voltage is applied to pin 17. All switching functions (standard, SCART, mute) can take place with TTL-equivalent level.
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Rev. A1: 23.02.1995
TELEFUNKEN Semiconductors
TDA4481-D
Absolute Maximum Ratings
Reference point Pin 11, unless otherwise specified Parameters Pin 16 Pin 16 Pin 3,6 Pin 1,2,4,5,7,8,9,12, 13,14,15,16,17,18,19, Symbol VS
I S
Supply voltage Supply current External voltages
Vext Vext Ptot Tj Tamb Tstg
Value 10 ... 13.5 80 V5 6 1 125 -25 to + 70 -25 to +125
Unit V mA V V W C C C
Power dissipation (in soldered position) Junction temperature Ambient temperature range Storage temperature range
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value 60 Unit K/W
Electrical Characteristics
VS = 12 V, Tamb = 25C, reference point Pin 20 (11), unless otherwise specified Parameters Test Conditions / Pins Supply voltage range Pin 16 Supply current FM-operation Pin 16 AM-operation Pin 16 Input DC voltage Pin 5 Output DC voltage Pin 7,9 Standard switching voltage, Pin 6 Standard B/G Standard L converter operation Standard switching current V6 5 V AGC range AM-operation Min. sound carrier input (AF-output voltage voltage Pin 7, 9 -3 dB) Pin 18-19 Audio output voltage m = 54 % Pin 7, 9 Harmonic distortion f = 32.4 MHz, Pin 7, 9 f mod = 1 kHz m = 30 % m = 80 % Symbol
V S
Min. 10 65 55
Typ.
Max. 13.5
Unit V mA
I
S
V o V o
4.4 3.7 1.9 0 3.5 2.3 2.7 1.5
V S
V
V
V
I 65 v v THD 50 500
20
mA
dB
mV
mV
0.3 1.0
1.0 2.5
%
Rev. A1: 23.02.1995
3 (10)
TDA4481-D
Parameters FM-operation Min. sound carrier input voltage Picture carrier input voltage Audio output voltage Test Conditions / Pins (intercarrier voltage -3 dB) Pin 18, 19 Pin 1-2 fPC = 38.9 MHz, Pin 7, 9 v1-2 = 20 mV, fSC =33.4 MHz, v18-19 = 10 mV, FM-deviation = 27 kHz, fmod = 1 kHz, QB = 22 fmod = 1 kHz, Pin 7, 9 QB = 22 FM-deviation = 30 kHz FM-deviation 30 kHz, fmod = 1 kHz Pin 7, 9 Black burst Grid test signal Pin 7 Pin 8 Pin 8 Pin 3 Symbol
TELEFUNKEN Semiconductors
Min. Typ. Max. Unit
v v v
10
50 20 500
mV
30 mV mV
Harmonic distortion
d
0.5
%
Signal to noise ratio Standard B/G according to CCIR 468 specification
(S+N)
N
62 50 80
dB 1)
AF amplifier - SCART-operation Volume control range V8 for VAFmin at Pin 7 V8 for VAFmax at Pin 7 SCART control voltage recording playback SCART input resistance AF input voltage THD 3 % SCART-amplification Attenuation v5 = 500 mV, V3 = 0 V Muting on (AF off) Switching current Muting off voltage to diode Converter operation DC at oscillator pin V6 3.5 V Oscillator frequency range Oscillator amplitude Operation quality factor of external oscillator stage
1) 2)
V8 V8 V3 V3 RS v G
0 4.5 0 4 55 -1 60 0 600 4 2.7 9 400 70 0 75
0.5
dB V V V kW V dB dB
2
Pin 5 Pin 5 Pin 7, 9 Pin 17 Pin 17 Pin 17 Pin 10
a7,9
V17 I17 V17 V10 f v QB
2 +1
1 VS
mA
V V MHz 2) mV 2)
V
13
Standard B/G IF-modulated-FBAS-signal See application circuit
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Rev. A1: 23.02.1995
TELEFUNKEN Semiconductors
TDA4481-D
Rev. A1: 23.02.1995
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TDA4481-D
TELEFUNKEN Semiconductors
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Rev. A1: 23.02.1995
TELEFUNKEN Semiconductors
TDA4481-D
Rev. A1: 23.02.1995
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TDA4481-D
TELEFUNKEN Semiconductors
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Rev. A1: 23.02.1995
TELEFUNKEN Semiconductors
TDA4481-D
Figure 2 Test circuit
Rev. A1: 23.02.1995
9 (10)
TDA4481-D
Dimensions in mm
Package: DIP 20
TELEFUNKEN Semiconductors
10 (10)
Rev. A1: 23.02.1995

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